STA 1550 SiC crucible

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US $3-100 / Pieces | 1 Piece/Pieces (Min. Order)
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Overview
Quick Details
Place of Origin:
Henan, China (Mainland)
Shape:
Pipe
Material:
Silicon Carbide (SiC)
SiO2 Content (%):
0.1%
Al2O3 Content (%):
0%
MgO Content (%):
0%
CaO Content (%):
05
Refractoriness (Degree):
Common (1580°< Refractoriness< 1770°)
CrO Content (%):
0.1%
SiC Content (%):
95%
Model Number:
STA-SC01
Brand Name:
STA
Diameter:
8-50mm
Temperature of application:
1380 C
Density:
>=3.02g/cm3
Open porosity:
<0.1
Bending strength:
280MPA
Modulus of elasticity:
300GPA
Mohs hardness:
13
Coefficient of thermal expansion:
4.5K-1*10-6
Acid and alkali resistance:
Excellent
Thermal conductivity:
45W/m.k
Packaging & Delivery
Packaging Details
in wooden box with foam board .or in standard export package .
Port
Qingdao Shanghai
Lead Time :
7-15days after receiving your deposit

 

                                                         STA silicon carbide crucible

 

 

 

The crucible is suitable for melting such metals as copper, gold ,silver, zinc, aluminium , lead .etc. Also represents capacity of molten copper in kiln. 

 

Characteristic Of Products
High-temperature resistance, anti-oxidation, corrosion resisting, abrasion resistance, good conductivity and thermal efficiency. Mainly used in the various powder sintering and metal smelting in the fields of metallurgy, chemical industry and glass, and used as the dewatering and various grinding elements in paper making industry, which are broadly applied and are ideal ceramic substitutes.

 

65-85% Content:

Item

S65

S75

S85

SiC

65%

75%

85%

Fe2O3

1.5

1.2

1

Refractoriness

≥1790°C

≥1790°C

≥1790°C

Softening point under load at 0.2MPa

≥1300°C

≥1400°C

≥1500°C

 

90% Content:

Chemical composition SIC

%

≥ 90

Physics Property

Max. service temperature

°C

2000

Density

g/cm3

2.75

Porosity

%

≤12

2kg/ cmrefractoriness under T2

Mpa °C

>1800

Bending strength at room temp.

Mpa

≥45

Bending strength at 1200°C

Mpa

≥50

Compressive strength

Mpa

≥150

Thermal Conductivity at 1000°C

W.(m.k)-1

≥ 12

 

 

 

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